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  • Axial Glass Package
  • Axial Glass Package
    Data
    sheet
    Part Number Description Features Application VR Rfs(typ) Ct(typ) Power
    Dissi-
    pation
    Enviro-
    nmental
    (Package)   condition   condition
     

    Designed for solid-state current control between radio BC and 1GHz bands used in variable resistance attenuator
    Long carrier lifetime PIN Diode

      • Operating as variable resistance attenuator in linearly high-frequency bands by reverse bias current
      • Having a long carrier lifetime, high quality intermodulation spurious characteristics
      • Power resistance 30V
    Variable resistance attenuator 30V 5.5Ω
    • IF=10mA
    • f=50MHz
    0.7pF
    • VR=15V
    • f=1MHz
    200mW
    • RoHS Compliance
     

    Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios
    Diffusion PIN Diode

      • Available power switching in VHF and UHF bands
      • Low capacitance at zero bias, extremely low dependence of reverse bias
      • Low series resistance
      • Low insertion loss, high isolation
      • Low harmonic distortion in transmitting and receiving
    High-frequency power switch 180V 0.65Ω
    • IF=50mA
    • f=470MHz
    1.6pF
    • VR=0V
    • f=100MHz
    1W
    • RoHS Compliance

    Please kindly be noted the contents herein to be changed to make corrections, modifications, enhancements, improvements or others.

  • Ceramic MELF Package
  • Ceramic MELF Package
    Data
    sheet
    Part Number Description Features Application VR Rfs(typ) Ct(typ) Power
    Dissi-
    pation
    Enviro-
    nmental
    (Package)   condition   condition
     
    • L8104
    • (3.5×2.2×2.2mm:Max)
    • (Ceramic MELF)
    • Ceramic MELF Package

    Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios

      • Available power switching in VHF and UHF bands
      • Low capacitance and extremely low dependency with reverse bias
      • Low insertion loss with high isolation
      • Low series resistance
    High-frequency power switch 180V 0.5Ω
    • IF=50mA
    • f=100MHz
    0.8pF
    • VR=40V
    • f=100MHz
    3W
    • RoHS Compliance
    • Pb free
     
    • L8104-240
    • (3.5×2.2×2.2mm:Max)
    • (Ceramic MELF)
    • Ceramic MELF Package

    Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios

      • Very low reverse current
      • Very low insertion loss, high isolation
      • Low series resistance
      • Repetitive peak reverse voltage 240V
    High-frequency power switch 240V 0.5Ω
    • IF=50mA
    • f=100MHz
    1.2pF
    • VR=40V
    • f=100MHz
    3W
    • RoHS Compliance
    • Pb free
     
    • L8107
    • (3.5×2.2×2.2mm:Max)
    • (Ceramic MELF)
    • Ceramic MELF Package

    Designed for solid state antenna switching applications in mobile radios.The L8107 PIN diode employs a square outline which makes it suitable for reflow assembly on surface mounting.

      • High power handling
      • High zero bias impedance
      • Low capacitance
      • High parallel resistance
      • High isolation
    High-frequency power switch 90V 1.2Ω
    • IF=50mA
    0.4pF
    • VR=40V
    1W
    • RoHS Compliance
    • Pb free

    Please kindly be noted the contents herein to be changed to make corrections, modifications, enhancements, improvements or others.

  • Molded Plastic Package 
  • Molded Plastic Package
    Data
    sheet
    Part Number Description Features Application VR Rfs(typ) Ct(typ) Power
    Dissi-
    pation
    Enviro-
    nmental
    (package)   condition   condition
     
    • L5204F
    • (2.5×1.2×0.8mm (typ))
    • (Plastic mold)
    • Molded Plastic Package

    Designed for solid-state antenna switch of high-frequency power switch used in commercial two-way radios.
    Silicon PIN Diode

      • Available power switching in VHF and UHF bands
      • Low capacitance and extremely low dependency with reverse bias
      • Low insertion loss with high isolation
      • Low series resistance
    High-frequency power switch 180V 0.5Ω
    • IF=50mA
    • f=100MHz
    0.6pF
    • VR=40V
    • f=100MHz
    500mW
    • RoHS Compliance
    • Pb free
    • Halogen free
     
    • L5208F
    • (1.7×0.9×0.8mm (typ))
    • (Plastic mold)
    • Molded Plastic Package

    Designed for solid-state antenna switch of High frequency power switch used in commercial portable two-way radios.

      • Available power switching in VHF and UHF bands
      • Low series resistance
      • Low capacitance
    High-frequency power switch 35V 0.45Ω
    • IF=10mA
    • f=100MHz
    0.6pF
    • VR=20V
    • f=100MHz
    300mW
    • RoHS Compliance
    • Pb free
    • Halogen free
     
    • L5206F
    • (1.7 x 0.9 x 0.5mm (typ))
    • (Plastic mold)
    • Molded Plastic Package

    Designed for solid-state antenna switch of high-frequency power switch used in commercial two-way radios.
    Silicon PIN Diode

      • Low series resistance
      • Low insertion loss
      • Low capacitance
      • High isolation
    High-frequency power switch 180V 1.0Ω
    • IF=50mA
    • f=100MHz
    0.15pF
    • VR=40V
    • f=100MHz
    300mW
    • RoHS Compliance
    • Pb free
    • Halogen free

Please kindly be noted the contents herein to be changed to make corrections, modifications, enhancements, improvements or others.